Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes
Author:
Affiliation:
1. Key Laboratory of Semiconductor Materials Science
2. Institute of Semiconductors
3. Chinese Academy of Sciences
4. Beijing 100083
5. People's Republic of China
Abstract
Red LEDs with a small blue shift are fabricated by using a stress engineering strategy through the growth of the pre-stained InGaN layer and dual-wavelength QWs on a cone-shape patterned sapphire substrate.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/CE/D0CE01769H
Reference46 articles.
1. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
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4. Band gaps of InN and group III nitride alloys
5. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
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