Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes-Reference-Cited by-同舟云学术

Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes

Published:2021 Issue:12 Volume:23 Page:2360-2366
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Yao Weizhen¹²³⁴⁵^ORCID,Wang Lianshan¹²³⁴⁵,Meng Yulin¹²³⁴⁵,Yang Shaoyan¹²³⁴⁵,Liu Xianglin¹²³⁴⁵,Niu Huidan¹²³⁴⁵,Wang Zhanguo¹²³⁴⁵^ORCID

Affiliation:

1. Key Laboratory of Semiconductor Materials Science

2. Institute of Semiconductors

3. Chinese Academy of Sciences

4. Beijing 100083

5. People's Republic of China

Abstract

Red LEDs with a small blue shift are fabricated by using a stress engineering strategy through the growth of the pre-stained InGaN layer and dual-wavelength QWs on a cone-shape patterned sapphire substrate.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D0CE01769H

Reference46 articles.

1. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

2. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures

3. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

4. Band gaps of InN and group III nitride alloys

5. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

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