Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer-Reference-Cited by-同舟云学术

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Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer

Published:2021-04 Issue: Volume:861 Page:157589
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Chen Li,Dai Yijun,Li Liang,Jiang Jiean,Xu Houqiang,Li Kuang-hui,Ng Tien Khee,Cui Mei,Guo Wei,Sun Haiding,Ye Jichun

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Key Research and Development Program of Zhejiang Province

Ningbo Innovation 2025 Major Project

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference25 articles.

1. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes;Hirayama;Jpn. J. Appl. Phys.,2014

2. Deep UV laser at 249 nm based on GaN quantum wells;Shan;ACS Photonics,2019

3. Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate;Sun;Adv. Funct. Mater.,2019

4. High quality 10.6 μ m AlN grown on pyramidal patterned sapphire substrate by MOCVD;Long;Appl. Phys. Lett.,2019

5. The growth optimization and mechanism of N-polar GaN films with an in situ porous SiN x interlayer;Deng;CrystEngComm,2017

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