Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate-Reference-Cited by-同舟云学术

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

Published:2019-09-26 Issue:48 Volume:29 Page:1905445
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Sun Haiding¹^ORCID,Mitra Somak²,Subedi Ram Chandra³,Zhang Yi⁴,Guo Wei⁵,Ye Jichun⁵,Shakfa Mohammad Khaled³,Ng Tien Khee³,Ooi Boon S.³,Roqan Iman S.²,Zhang Zihui⁶,Dai Jiangnan⁴^ORCID,Chen Changqing⁴^ORCID,Long Shibing¹

Affiliation:

1. School of MicroelectronicsUniversity of Science and Technology of China Hefei Anhui 230026 China

2. Physical Sciences and Engineering DivisionKing Abdullah University of Science and Technology (KAUST) Thuwal 23955 Saudi Arabia

3. Computer, Electrical, and Mathematical Sciences and Engineering DivisionKing Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia

4. Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and Technology Wuhan 430074 China

5. Ningbo Institute of Materials Technology and EngineeringChinese Academy of Sciences Ningbo Zhejiang 315201 China

6. School of Electronics and Information EngineeringHebei University of Technology Tianjin 300401 China

Funder

University of Science and Technology of China

National Natural Science Foundation of China

King Abdullah University of Science and Technology

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201905445

Reference50 articles.

1. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

2. AlGaN photonics: recent advances in materials and ultraviolet devices

3. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

4. Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene

5. Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer

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