High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD-Reference-Cited by-同舟云学术

High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD

Published:2019-01-28 Issue:4 Volume:114 Page:042101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Long Hanling¹,Dai Jiangnan¹,Zhang Yi¹,Wang Shuai¹,Tan Bo¹,Zhang Shuang¹,Xu Linlin¹,Shan Maocheng¹,Feng Zhe Chuan²,Kuo Hao-chung³,Chen Changqing¹

Affiliation:

1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China

2. College of Physics Science and Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Laboratory of Optoelectronic Materials and Detection Technology, Guangxi University, Nanning 530004, People's Republic of China

3. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan

Funder

Director Fund of WNLO

The Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Science

The National Key Research and Development Program of China

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5074177

Reference38 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. Ultraviolet light-emitting diodes based on group three nitrides

3. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

5. AlGaN photonics: recent advances in materials and ultraviolet devices

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