Nanoscale Raman mapping of elastic stresses in multilayer heterostructure based on multi-period GaN/AlN superlattices grown using HVPE technology on hybrid SiC/Si substrate-Reference-Cited by-同舟云学术

Nanoscale Raman mapping of elastic stresses in multilayer heterostructure based on multi-period GaN/AlN superlattices grown using HVPE technology on hybrid SiC/Si substrate

Published:2024-04 Issue: Volume:150 Page:115184
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Seredin P.V.^ORCID,Sharofidinov Sh. Sh.,Goloshchapov D.L.,Peshkov Y.A.^ORCID,Ivkov S.A.,Buylov N.S.,Eremeev K.A.,Kukushkin S.A.

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

Elsevier BV

Reference41 articles.

1. GaN/Gr (2D)/Si (3D) combined high-performance hot electron transistors;Zou;ACS Nano,2023

2. Design and analysis of high electron mobility transistor inspired: III-V electro-optic modulator topologies;Das;Semicond. Sci. Technol.,2020

3. Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer;Kohen;AIP Adv.,2016

4. Recessed AlGaN/GaN UV phototransistor;Jang;JSTS,2019

5. New tunneling features in polar III-nitride resonant tunneling diodes;Encomendero;Phys. Rev. X,2017

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanical strain effect on the optoelectronic properties and photocatalysis applications of layered AlN/GaN nanoheterostructure;Journal of Molecular Modeling;2024-08-13

2. Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBE;Optical Materials;2024-06

3. Design and Growth of Low Resistivity P-Type AlGaN Superlattice Structure;Micromachines;2024-04-29