GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors-Reference-Cited by-同舟云学术

GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors

Published:2023-05-01 Issue:9 Volume:17 Page:8262-8270
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Zou Can¹,Zhao Zixuan¹,Xu Mingjun¹,Wang Xingfu¹^ORCID,Liu Qing¹,Chen Kai¹,He Longfei²,Gao Fangliang¹^ORCID,Li Shuti¹^ORCID

Affiliation:

1. Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, People’s Republic of China

2. Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, People’s Republic of China

Funder

Special Project for Research and Development in Key areas of Guangdong Province

Natural Science Foundation of Guangdong Province for Distinguished Young Scholars

Department of Education of Guangdong Province

National Natural Science Foundation of China

Guangzhou City

Featured Innovation Projects of Colleges and Universities in Guangdong Province

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c12435

Reference42 articles.

1. Going ballistic: Graphene hot electron transistors

2. A heteroepitaxial perovskite metal-base transistor

3. Two-dimensional materials for electronic applications

4. High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors

5. Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter

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