Design and Growth of Low Resistivity P-Type AlGaN Superlattice Structure
Author:
Affiliation:
1. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
2. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi’an 710071, China
Abstract
Funder
the National Key R&D Program of China
Publisher
MDPI AG
Link
https://www.mdpi.com/2072-666X/15/5/596/pdf
Reference36 articles.
1. Electrochemical Potentiostatic Activation for the Improve ment of 270 Nm AlGaN-Based UV-C Light-Emitting Diodes;Lee;Ecs J. Solid State Sci. Technol.,2022
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3. Milliwatt-Power AlGaN Deep-UV Light-Emitting Diodes at 254 Nm Emission as a Clean Alternative to Mercury Deep-UV Lamps;Khan;Phys. Status Solidi A-Appl. Mater. Sci.,2023
4. Improving Hole Injection from P-EBL down to the End of Active Region by Simply Playing with Polarization Effect for AlGaN Based DUV Light-Emitting Diodes;Zhang;Aip Adv.,2020
5. Balanced Resistivity in N-AlGaN Layer to Increase the Current Uniformity for AlGaN-Based DUV LEDs;Chen;IEEE Photonics Technol. Lett.,2022
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