Improving hole injection from p-EBL down to the end of active region by simply playing with polarization effect for AlGaN based DUV light-emitting diodes-Reference-Cited by-同舟云学术

Improving hole injection from p-EBL down to the end of active region by simply playing with polarization effect for AlGaN based DUV light-emitting diodes

Published:2020-06-01 Issue:6 Volume:10 Page:065032
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zhang Danyang¹²^ORCID,Chu Chunshuang¹²^ORCID,Tian Kangkai¹²^ORCID,Kou Jianquan¹²^ORCID,Bi Wengang¹²^ORCID,Zhang Yonghui¹²^ORCID,Zhang Zi-Hui¹²^ORCID

Affiliation:

1. School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, 5340 Xiping Road, Beihen District, Tianjin 300401, People’s Republic of China

2. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, 5340 Xiping Road, Beichen District, Tianjin 300401, People’s Republic of China

Funder

Program for Top 100 Innovative Talents in Colleges and Universities of Hebei Province

Program for 100-Talent-Plan of Hebei Province

Suzhou Institute of Nano-Tech and Nano-BionicsResearch Fund of Chinese Academy of Science

Natural Science Foundation of Hebei Province

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0007460

Reference31 articles.