Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency-Reference-Cited by-同舟云学术

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Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency

Published:2017 Issue:4 Volume:6 Page:Q42-Q52
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Park Jae-Seong,Kim Jong Kyu,Cho Jaehee,Seong Tae-Yeon

Funder

Development of R D professionals on LED convergence lighting for shipbuildings/marine plants and environments

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference148 articles.

1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

2. AlGaN multiple quantum well based deep UV LEDs and their applications

3. Ultraviolet light-emitting diodes based on group three nitrides

4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

5. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

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1. First-principles study on electronic properties of different activation mechanisms on AlGaN nanowire photocathodes surface;Solid State Communications;2024-10

2. Efficient and droop-free AlGaN-based UV-C LED using the inverted linearly graded active region and engineered hole source layer;Optik;2024-09

3. Enhanced Excitonic Nature of MAPbBr₃ Nanocrystals in Nanoporous GaN;Advanced Optical Materials;2024-06-18

4. On method of estimating recombination rates by analysis of time-resolved luminescence;Journal of Luminescence;2024-05

5. A density functional theory study on the gas-phase formation of InGaN by metalorganic chemical vapor deposition;Journal of Crystal Growth;2024-04

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