Improved luminescence from InGaN/GaN MQWs by reducing initial nucleation density using sputtered AlN on sapphire substrate-Reference-Cited by-同舟云学术

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Improved luminescence from InGaN/GaN MQWs by reducing initial nucleation density using sputtered AlN on sapphire substrate

Published:2017-05 Issue: Volume:465 Page:12-17
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang Hongbo,Sodabanlu Hassanet,Daigo Yoshiaki,Seino Takuya,Nakagawa Takashi,Sugiyama Masakazu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer;Amano;Appl. Phys. Lett.,1986

2. GaN growth using GaN buffer layer;Nakamura;Jpn. J. Appl. Phys.,1991

3. Metal organic vapour phase epitaxy of GaN and lateral overgrowth;Gibart;Rep. Prog. Phys.,1999

4. High dislocation densities in high efficiency GaN-based light-emitting diodes;Lester;Appl. Phys. Lett.,1995

5. Direct evidence that dislocations are non-radiative recombination centers in GaN;Sugahara;Jpn. J. Appl. Phys.,1998

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3. Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure;Crystals;2021-10-06

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