Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate-Reference-Cited by-同舟云学术

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Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

Published:2015-09-29 Issue:10 Volume:24 Page:108101
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Zhao Dan-Mei,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Zhu Jian-Jun,Chen Ping,Liu Wei,Li Xiang,Shi Ming

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/24/10/108101/pdf

Reference20 articles.

1. In situ observation of coalescence-related tensile stresses during metalorganic chemical vapor deposition of GaN on sapphire

2. Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer

3. Dislocation reduction in GaN grown on stripe patterned r-plane sapphire substrates

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photophysical properties of nitrogen-doped carbon quantum dots synthesized by graphite;Journal of Materiomics;2023-10

2. Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD;Surfaces and Interfaces;2023-02

3. Effect of HfO2 nitridation on structural, optical and electrical properties of GaN films grown on HfO2/Si(100) by laser molecular beam epitaxy;Materials Research Express;2018-08-03

4. Analysis of the growth of GaN epitaxy on silicon;Journal of Semiconductors;2018-03

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