Dislocation reduction in GaN grown on stripe patterned r-plane sapphire substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2754643
Reference10 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
3. Optimization of a-plane GaN growth by MOCVD on r-plane sapphire
4. Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth
5. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
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