Optimization of a-plane GaN growth by MOCVD on r-plane sapphire
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Giant electric fields in unstrained GaN single quantum wells
2. Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
3. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
4. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
5. Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN
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1. Second harmonic generation from a-plane GaN vertical monolithic microcavity pumped with femtosecond laser;Applied Physics Express;2023-07-01
2. Nonpolar Growth of GaN Films on Polar Sapphire Substrate Using Pulsed Laser Deposition: Investigation of Substrate Temperature Variation on the Quality of Films;physica status solidi (b);2023-03-31
3. Joint effect of miscut r-plane sapphire substrate and different nucleation layers on structural characteristics of non-polar a-plane GaN films;CrystEngComm;2023
4. Using a Au/pitted a-plane GaN substrate to aggregate polar molecules for highly efficient surface-enhanced Raman scattering;The Journal of Chemical Physics;2022-09-21
5. Low temperature growth of semi-polar InN (101¯1) on non-crystalline substrate by plasma-assisted laser ablation technique;Applied Surface Science;2022-05
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