Analysis of the growth of GaN epitaxy on silicon
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/1674-4926/39/i=3/a=033006/pdf
Reference17 articles.
1. Dislocation density and tetragonal distortion of a GaN epilayer on Si (111): A comparative RBS/C and TEM study
2. On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE
3. physica status solidi (c)
4. Study on GaN-based light emitting diodes grown on 4-in. Si (111) substrate
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