Conduction band offset at the InN∕GaN heterojunction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2821378
Reference18 articles.
1. Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE
2. Universal alignment of hydrogen levels in semiconductors, insulators and solutions
3. Band Offsets of InN/GaN Interface
4. High structural quality InN∕In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy
5. Polarization-induced valence-band alignments at cation- and anion-polar InN∕GaN heterojunctions
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