Polarization-induced valence-band alignments at cation- and anion-polar InN∕GaN heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2764448
Reference19 articles.
1. Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy
2. Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
3. Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy
4. Valence band splittings and band offsets of AlN, GaN, and InN
5. Small valence-band offsets at GaN/InGaN heterojunctions
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