Band Offsets of InN/GaN Interface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 41 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Evidence of two-dimensional lateral quantum confinement in self-formed core–shell InGaN nanowires on Si (111) emitting in the red;Applied Physics Letters;2024-05-27
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4. Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials;Journal of Semiconductors;2019-12-01
5. Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells;Materials;2019-04-16
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