Universal alignment of hydrogen levels in semiconductors, insulators and solutions

Author:

Van de Walle Chris G.,Neugebauer J.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Reference25 articles.

1. Pankove, J. I. & Johnson, N. M. Semiconductors and Semimetals Vol. 34, Hydrogen in Semiconductors (Boston, Academic, 1991)

2. Blöchl, P. & Stathis, J. H. Hydrogen electrochemistry and stress-induced leakage current in silica. Phys. Rev. Lett. 62, 372–375 (1999)

3. Schlapbach, L. & Züttel, A. Hydrogen-storage materials for mobile applications. Nature 414, 353–358 (2001)

4. Mills, B. E., Martin, R. L. & Shirley, D. A. Further studies of the core binding energy-proton affinity correlation in molecules. J. Am. Chem. Soc. 98, 2380–2385 (1976)

5. Van de Walle, C. G. & Johnson, N. M. in Semiconductors and Semimetals Vol. 57, Gallium Nitride (GaN) II (eds Pankove, J. I. & Moustakas, T. D.) 157–184 (Academic, Boston, 1998)

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