Band alignment and thermal stability of HfO2 gate dielectric on SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2969061
Reference23 articles.
1. Recent Advances in (0001) 4H-SiC MOS Device Technology
2. Band alignment and defect states at SiC/oxide interfaces
3. Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC
4. Interface properties of metal‐oxide‐semiconductor structures onn‐type 6H and 4H‐SiC
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2. Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC;Applied Physics Letters;2020-09-08
3. Band alignment regulation of HfO2/SiC heterojunctions induced by PEALD with in situ NH3-plasma passivation;Physics Letters A;2019-09
4. Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric;AIP Advances;2018-12
5. In-situ growth of HfO 2 on clean 2H-MoS 2 surface: Growth mode, interface reactions and energy band alignment;Applied Surface Science;2017-10
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