Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Published:2020-09-08 Issue:10 Volume:117 Page:102105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shen Zhanwei¹,Zhang Feng²^ORCID,Chen Jun¹,Fu Zhao²,Liu Xingfang¹³,Yan Guoguo¹,Lv Bowen⁴,Wang Yinshu⁴,Wang Lei¹,Zhao Wanshun¹,Sun Guosheng¹³,Zeng Yiping¹³

Affiliation:

1. Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. Department of Physics, Xiamen University, Xiamen 361005, China

3. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

4. Department of Physics, Beijing Normal University, Beijing 100875, China

Funder

Beijing Natural Science Foundation

Science Challenge Project

Fundamental Research Funds for the Central Universities

National Key Research and Development Program of China Stem Cell and Translational Research

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0018330

Reference43 articles.

1. SiC power-switching devices-the second electronics revolution?

2. Silicon Carbide Power Devices

3. Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates

4. High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect

5. Effects of annealing on the performance of 4H-SiC metal–semiconductor–metal ultraviolet photodetectors

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