Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric-Reference-Cited by-同舟云学术

Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric

Published:2018-12 Issue:12 Volume:8 Page:125314
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Liang Lin¹,Li Wei²,Li Sichao¹,Li Xuefei¹,Wu Yanqing¹

Affiliation:

1. State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

Funder

State Key Laboratory of Advanced Electromagnetic Engineering and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5051615

Reference14 articles.

1. Silicon carbide high-power devices

2. Improved high-field reliability for a SiC metal–oxide–semiconductor device by the incorporation of nitrogen into its HfTiO gate dielectric

3. Influences of high-temperature annealing on atomic layer deposited Al2O3/4H-SiC

4. Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

5. HfO2-based insulating stacks on 4H–SiC(0001)

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1. 4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars;Journal of Electronic Materials;2024-03-18

2. Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate;Nanomaterials;2023-05-06