Influences of high-temperature annealing on atomic layer deposited Al2O3/4H-SiC
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=7/a=078102/pdf
Reference18 articles.
1. Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal–oxide–semiconductor devices
2. The electrical characteristics of a 4H—silicon carbide metal—insulator—semiconductor structure with Al 2 O 3 as the gate dielectric
3. Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al 2 O 3 /SiO 2 stacked dielectric
4. Electronic Properties of Thin HfO2Films Fabricated by Atomic Layer Deposition on 4H-SiC
5. Influence of inserting AlN between AlSiON and 4H–SiC interface for the MIS structure
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3. Imaging ultra-weak UV light below 100 pW cm−2 using a 4H–SiC photodetector with an Al2O3 interfacial layer;Physical Chemistry Chemical Physics;2024
4. Adhesion and electronic properties of 4H-SiC/α-Al2O3 interfaces with different terminations calculated via first-principles methods;Surfaces and Interfaces;2023-10
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