Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al 2 O 3 /SiO 2 stacked dielectric
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/21/8/087701/pdf
Reference11 articles.
1. High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator
2. Study of a 4H–SiC epitaxial n-channel MOSFET
3. High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric
4. Epitaxial MgO as an alternative gate dielectric for SiC transistor applications
5. Electronic structure and band alignment at the HfO2∕4H-SiC interface
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1. Effect of hydrogen plasma treatment on the electrical properties for SiC-based power MOSFETs;Microelectronic Engineering;2022-04
2. Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition;Materials Science Forum;2020-07
3. High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis;Japanese Journal of Applied Physics;2020-02-28
4. Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO;Chinese Physics B;2017-09
5. Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness;Journal of Electronic Materials;2016-07-11
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