Electronic Properties of Thin HfO2Films Fabricated by Atomic Layer Deposition on 4H-SiC-Reference-Cited by-同舟云学术

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Electronic Properties of Thin HfO2Films Fabricated by Atomic Layer Deposition on 4H-SiC

Published:2011-05 Issue:5 Volume:119 Page:696-698
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Taube A.¹²,Gierałtowska S.³,Gutt T.¹,Małachowski T.¹,Pasternak I.¹,Wojciechowski T.³,Rzodkiewicz W.¹,Sawicki M.³,Piotrowska A.¹

Affiliation:

1. Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

2. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

3. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

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1. Electrostatic Engineering of β-Ga₂O₃ Trench Metal–Insulator–Semiconductor Schottky Barrier Diodes Using a Bilayer Dielectric Stack;IEEE Transactions on Electron Devices;2022-10

2. Review—Gate Oxide Thin Films Based on Silicon Carbide;ECS Journal of Solid State Science and Technology;2022-08-01

3. Effects of Oxidation Duration on the Structural and Electrical Characteristics of Ho2O3 Gate Oxide on 4H-SiC Substrate;Journal of Electronic Materials;2022-05-22

4. Electrical characterization of memory capacitors for nonvolatile memory applications based on nanolaminated HfO₂/Al₂O₃ and Al-doped HfO₂ stacks;Journal of Physics: Conference Series;2022-03-01

5. High-k dielectrics for 4H-silicon carbide: present status and future perspectives;Journal of Materials Chemistry C;2021

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