The electrical characteristics of a 4H—silicon carbide metal—insulator—semiconductor structure with Al 2 O 3 as the gate dielectric
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference19 articles.
1. The mechanism of defect creation and passivation at the SiC/SiO2interface
2. Carbon Clusters as Possible Defects in the SiC–SiO2 Interface
3. An accurate determination of barrier heights at the HfO2∕Si interfaces
4. Ta 2 Si short time thermal oxidized layers in N 2 O and O 2 to form high- k gate dielectric on SiC
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Density functional study on electric structure and optical properties in Na-doped 3C-SiC;Modern Physics Letters B;2019-08-30
2. Electrical Properties of the Al2O3/4H-SiC Interface Prepared by Aerosol Deposition;Science of Advanced Materials;2016-02-01
3. Effect of intense laser irradiation on the structural stability of 3C-SiC;Acta Physica Sinica;2015
4. Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al 2 O 3 films;Chinese Physics B;2013-12
5. Influences of high-temperature annealing on atomic layer deposited Al2O3/4H-SiC;Chinese Physics B;2013-07
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