4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11664-024-11014-y.pdf
Reference26 articles.
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2. Y. Wang, G. Han, W. Xu, T. You, H. Hu, Y. Liu, and Y. Hao, Recessed-gate Ga2O3-on-SiC MOSFETs demonstrating a stable power figure of merit of 100 mW/cm2 up to 200 °C. IEEE Trans. Elect. Dev. 69, 1945 (2022).
3. R.P. Ramamurthy, N. Islam, M. Sampath, D.T. Morisette, and J.A. Cooper, The tri-gate MOSFET: a new vertical power transistor in 4H-SiC. IEEE Elect. Dev. Lett. 42, 90 (2020).
4. H. Yang, S. Hu, S. Ran, J.A. Wang, and T. Liu, Simulative researching of a 1200V SiC trench MOSFET with an enhanced vertical RESURF effect. IEEE J. Elect. Dev. Soc. 8, 1335 (2020).
5. Y. Kagawa, N. Fujiwara, K. Sugawara, R. Tanaka, Y. Fukui, Y. Yamamoto, and S. Yamakawa, 4H-SiC trench MOSFET with bottom oxide protection. Mater. Sci. Forum 778, 919 (2014).
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