The Tri-Gate MOSFET: A New Vertical Power Transistor in 4H-SiC-Reference-Cited by-同舟云学术

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The Tri-Gate MOSFET: A New Vertical Power Transistor in 4H-SiC

Published:2021-01 Issue:1 Volume:42 Page:90-93
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ramamurthy Rahul P.^ORCID,Islam Naeem^ORCID,Sampath Madankumar^ORCID,Morisette Dallas T.^ORCID,Cooper James A.^ORCID

Funder

Army Research Laboratory

Advanced Research Projects Agency–Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9307284/09268099.pdf?arnumber=9268099

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars;Journal of Electronic Materials;2024-03-18

2. Comparisons of Performance and Reliability in 4H-SiC Tri-gate and Planar MOSFETs;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27

3. Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs;Materials Science Forum;2023-05-31

4. Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs;Key Engineering Materials;2023-05-19

5. Multidimensional device architectures for efficient power electronics;Nature Electronics;2022-11-17

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