Author:
Sreejith S.,Ajayan J.,Devasenapati S. Babu,Sivasankari B.,Tayal Shubham
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference144 articles.
1. Chen X, Chen W, Yang X, Ren Y, Qiao L (2021) Common Mode EMI Mathematical Modeling Based on Inductive Coupling Theory in a Power Module With Parallel-Connected SiC MOSFETs. IEEE Trans Power Electron 36:6644–6661
2. Dimitrijev S (2006) Silicon carbide as a material for mainstream electronics. Microelectron Eng 83:123–125
3. Kwon I (2018) Hyuck-In Kwon. Il Hwan Cho, Development of high temperature operation silicon based MOSFET for harsh environment application, Results in Physics 11:475–481
4. Pushpakaran BN, Subburaj AS, Bayne SB, Mookken J (2016) Impact of silicon carbide semiconductor technology in Photovoltaic Energy System. Renew Sustain Energy Rev 55:971–989
5. Palmour JW, Edmond JA, Kong HS, Carter CH (1993) 6H-Silicon Carbide power devices for aerospace applications. Proceedings Intersoc. Energy Conversion Eng. Conf. 1:249–254
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