HfO2-based insulating stacks on 4H–SiC(0001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1538310
Reference24 articles.
1. SiC devices: physics and numerical simulation
2. Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC
3. Influence of growth conditions on electrical characteristics of AlN on SiC
4. Insulator investigation on SiC for improved reliability
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