In-situ growth of HfO 2 on clean 2H-MoS 2 surface: Growth mode, interface reactions and energy band alignment-Reference-Cited by-同舟云学术

In-situ growth of HfO 2 on clean 2H-MoS 2 surface: Growth mode, interface reactions and energy band alignment

Published:2017-10 Issue: Volume:420 Page:523-534
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chen Chang Pang,Ong Bin Leong,Ong Sheau Wei,Ong Weijie,Tan Hui Ru,Chai Jian Wei,Zhang Zheng,Wang Shi Jie,Pan Ji Sheng,Harrison Leslie John,Kang Hway Chuan,Tok Eng Soon

Funder

Department of Physics, National University of Singapore

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference45 articles.

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4. Atomic layer deposition of Al2O3 on WSe2 functionalized by titanyl phthalocyanine;Park;ACS Nano,2016

5. Single-layer MoS2 transistors;Radisavljevic;Nat. Nano,2011

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