Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4960006
Reference30 articles.
1. White light emitting diodes with super-high luminous efficacy
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5. The benefit of disorder
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3. Role of hole confinement in the recombination properties of InGaN quantum structures;Scientific Reports;2019-06-21
4. In/GaN(0001)- ( 3 × 3 ) R 30 ° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices;Applied Physics Letters;2017-02-13
5. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature;Journal of Applied Physics;2016-12-15
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