Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=6/a=062702/pdf
Reference18 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
3. Lasing Emission from an In0.1Ga0.9N Vertical Cavity Surface Emitting Laser
4. A vertical cavity light emitting InGaN quantum well heterostructure
5. Engineering the Lateral Optical Guiding in Gallium Nitride-Based Vertical-Cavity Surface-Emitting Laser Cavities to Reach the Lowest Threshold Gain
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