Abstract
Abstract
We proposed and investigated hydrogen cleaning for decreasing pits and threading dislocations generated at interfaces of GaN on AlInN in Si-doped graded AlInN/GaN DBRs. We found that hydrogen cleaning was very useful to suppress the threading dislocation generations, resulting in two orders of magnitude less than the case without hydrogen cleaning. A high-quality conductive Si-doped AlInN/GaN DBR was obtained with hydrogen cleaning, showing a maximum reflectivity of 99.8%, a low pit density of less than 106 cm−2, and a reasonably low vertical resistance of 15 Ω.
Funder
Japan Society for the Promotion of Science
Ministry of Education, Culture, Sports, Science and Technology
Core Research for Evolutional Science and Technology
Subject
General Physics and Astronomy,General Engineering
Cited by
3 articles.
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