Affiliation:
1. Max-Born-Institut Max-Born-Str. 2A D-12489 Berlin Germany
2. Instytut Wysokich Ciśnień PAN Sokołowska 29/37 01-142 Warsaw Poland
3. NUSOD Institute Newark DE 19714-7204 USA
Abstract
The analysis of the photoluminescence of polar light emitting diode (LED) structures with a 25 nm In0.17Ga0.83N quantum well is reported. The observed emission most likely originates from a set of energetically close excited states (ES), while the ground state decays only extremely slowly on a μs‐to‐ms timescale, that is, long‐living charge accumulates there. However, this population can also be quantified spectroscopically by applying short reverse voltage pulses. The emission from ES is effective and nearly exponential with decay time constants of 1.5 and 8 ns at 6 and 300 K, respectively, and is likely dominated by radiative processes. These findings point to a possible route to improved polar device architectures.
Funder
Horizon 2020 Framework Programme
Subject
Condensed Matter Physics,General Materials Science
Cited by
2 articles.
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