Light emission at reverse voltage in a wide-well (In,Ga)N/GaN light-emitting diode
Author:
Affiliation:
1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
2. Institute of Applied Mathematics and Mechanics, University of Warsaw, Banacha 2, 02-097 Warsaw, Poland
Funder
National Science Centre Poland
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.21.054030/fulltext
Reference35 articles.
1. The role of piezoelectric fields in GaN-based quantum wells
2. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
3. Effects of macroscopic polarization in III-V nitride multiple quantum wells
4. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
5. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
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