Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature-Reference-Cited by-同舟云学术

Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature

Published:2016-12-15 Issue:23 Volume:120 Page:235302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Yoshikawa Akihiko¹²,Kusakabe Kazuhide¹,Hashimoto Naoki¹,Imai Daichi¹,Hwang Eun-Sook¹

Affiliation:

1. Center for SMART Green Innovation Research, Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

2. Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference45 articles.

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3. H. Morkoc , Nitride Semiconductors and Devices ( Springer, Heidelberg, 1999).

4. S. Nakamura and G. Fasol , The Blue Laser Diode ( Springer, Berlin, 2000).

5. Wide Bandgap Semiconductors, edited by K. Takahashi , A. Yoshikawa , and A. Sandh ( Springer, Berlin, 2007).

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