Role of hole confinement in the recombination properties of InGaN quantum structures
Author:
Funder
EC | Horizon 2020 Framework Programme
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-45218-8.pdf
Reference51 articles.
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2. Lester, S. D., Ponce, F. A., Craford, M. G. & Steigerwald, D. A. High dislocation densities in high efficiency GaN‐based light‐emitting diodes. Appl. Phys. Lett. 66, 1249–1251 (1995).
3. Nakamura, S. The Roles of Structural Imperfections in Light-Emitting Diodes InGaN-Based Blue Diodes and Laser Diodes. 281, 956–961 (1998).
4. Chichibu, S. Exciton localization in InGaN quantum well devices. J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. 16, 2204 (1998).
5. Jones, C. M., Teng, C. H., Yan, Q., Ku, P. C. & Kioupakis, E. Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations. Appl. Phys. Lett. 111, 113501 (2017).
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