Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations-Reference-Cited by-同舟云学术

Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

Published:2017-09-11 Issue:11 Volume:111 Page:113501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jones Christina M.¹^ORCID,Teng Chu-Hsiang²,Yan Qimin³,Ku Pei-Cheng¹²^ORCID,Kioupakis Emmanouil⁴

Affiliation:

1. Applied Physics Program, University of Michigan, 450 Church St, Ann Arbor, Michigan 48109, USA

2. Electrical Engineering and Computer Science Department, University of Michigan, 1301 Beal Ave, Ann Arbor, Michigan 48109, USA

3. Department of Physics, Temple University, 1925 N. 12th St, Philadelphia, Pennsylvania 19122, USA

4. Materials Science and Engineering Department, University of Michigan, 2300 Hayward St, Ann Arbor, Michigan 48109, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5002104

Reference31 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

3. Efficiency droop in nitride-based light-emitting diodes

4. Solid-State Lighting

5. Auger recombination in InGaN measured by photoluminescence

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