Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy-Reference-Cited by-同舟云学术

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Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy

Published:2021-02-08 Issue:6 Volume:118 Page:062104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Maidaniuk Y.¹,Kumar R.²^ORCID,Mazur Yu. I.¹^ORCID,Kuchuk A. V.¹^ORCID,Benamara M.¹^ORCID,Lytvyn P. M.³^ORCID,Salamo G. J.¹

Affiliation:

1. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

2. Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science, Pilani, Pilani 333031, India

3. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv 03680, Ukraine

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0039107

Reference37 articles.

1. Single-photon emission from isolated monolayer islands of InGaN

2. Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

3. Role of hole confinement in the recombination properties of InGaN quantum structures

4. Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth

5. Submonolayer InGaAs/GaAs quantum dot solar cells

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