In/GaN(0001)- ( 3 × 3 ) R 30 ° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4976198
Reference24 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
3. Nonalloyed ohmic contacts on GaN using InN/GaN short‐period superlattices
4. Observation of ordering and phase separation in InxGa1−xN layers
5. Nanostructure formation and emission characterization of blue emission InN/GaN quantum well with thin InN well layers
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