Enhancing indium bilayer nitridation through novel hydrogen insertion process in InN epitaxy: A kinetic mechanism

Author:

Zhou Jin1ORCID,Liu Yansheng1ORCID,Dong Xinwei1ORCID,Guo Fei1ORCID,Fu Jianbo1ORCID

Affiliation:

1. School of Electronic Engineering, Guangxi Key Laboratory of Multidimensional Information Fusion for Intelligent Vehicles, Guangxi University of Science and Technology , Liuzhou, Guangxi 545006, China

Abstract

InN holds great promise for a wide range of applications, including broadband optical devices, high-frequency electronic devices, and serving as a substrate for highly sensitive gas detectors and efficient catalysts. Nevertheless, production of high-quality InN thin films through epitaxy has remained a significant challenge. This is primarily due to complexities arising from the low dissociation temperature and the high N2 equilibrium pressure of InN, which lead to formation of numerous nitrogen vacancies and a propensity to generate indium metal nanoparticles. Efficacy of the indium bilayer pre-deposition method for InN film growth has been established in prior studies. In this work, we introduce a specialized hydrogen insertion method to further enhance nitridation of the indium bilayer. The corresponding kinetic mechanism has been demonstrated through theoretical simulations and practical epitaxy experiments, leading to the development of an optimized hydrogen insertion process. This research represents a substantial improvement over existing InN epitaxial methods that involve control of the indium bilayer and introduces a novel mechanism for enhancing InN heteroepitaxy.

Funder

Guangxi Scientific Base & Talent Special Project

Guangxi Science and Technology Program

Publisher

AIP Publishing

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