Electron mobilities in gallium, indium, and aluminum nitrides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356650
Reference45 articles.
1. Point-defect energies in the nitrides of aluminum, gallium, and indium
2. Electronic structures and doping of InN,InxGa1−xN, andInxAl1−xN
3. III-V nitrides for electronic and optoelectronic applications
4. Properties of sputtered nitride semiconductors
5. Pseudopotential band structure of indium nitride
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