Large magnetoresistance in Si:B-SiO2-Al structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2832614
Reference16 articles.
1. Effect of a magnetic field on thermally activated tunneling ionization of impurity centers in semiconductors
2. The effect of magnetic field on the electrical breakdown characteristics
3. Metal-insulator transition in Si:X(X=P,B): Anomalous response to a magnetic field
4. Negative resistance of silicon p-n junctions at 4·2°K
5. Magnetoresistance ofp-Type Si in the Hopping Region
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