Separating interface magnetoresistance from bulk magnetoresistance in silicon-based Schottky heterojunctions device
Author:
Affiliation:
1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
2. Division of Functional Material Research, Central Iron and Steel Research Institute, Beijing 100081, China
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5097736
Reference34 articles.
1. Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications
2. GMR applications
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5. Large, non-saturating magnetoresistance in WTe2
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