Negative resistance of silicon p-n junctions at 4·2°K
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Impact ionization of impurities in germanium
2. The low temperature electrical conductivity of n-type germanium
3. Hot Electrons and Carrier Multiplication in Silicon at Low Temperature
4. Correspondence
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Unravelling the mechanism of large room-temperature magnetoresistance in silicon;Journal of Physics D: Applied Physics;2009-09-03
2. Large magnetoresistance in Si:B-SiO2-Al structures;Journal of Applied Physics;2008-04
3. NEGATIVE CONDUCTANCE MICROWAVE DEVICES;Tunnelling and Negative Resistance Phenomena in Semiconductors;1977
4. Behaviour of silicon pn junctions at temperatures between 4-2 and 300° K†;International Journal of Electronics;1968-01
5. Properties of Gallium Arsenide Diodes between 4.2° and 300°K;Journal of Applied Physics;1965-11
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