Space Charge Limited Current and Magnetoresistance in Si

Author:

Jin Xin1,Wang Hai1

Affiliation:

1. Capital Normal University

Abstract

Mott and Gurney point out1, for defect-free semiconductors, I-V curve deviates from linear Ohmic type to nonlinear space-charge limited behavior at high electric field. A surprising large magnetoresistance (MR) has been reported in space-charge limited region by Delmo2-4recently. In present work, I-V and MR curves of silicon samples with different doping concentration are measured. It is observed that I-V curve enters into space charge region at lower voltage in heavily doped samples, however, space-charge limited current is absent in lightly doped samples. Two samples show different types of MR curve. In heavily doped samples, 8% MR is acquired at 3kG and the value of MR increases linearly up to 17%, while MR increases slowly up to 11% in lightly doped samples. It is believed that the dopant and trap in N-type silicon has a strong influence on the space-charge limited current and MR.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Reference17 articles.

1. N. F. Mott and R.W. Gurney, Electronic Processes in Ionic Crystals (Oxford University Press, London, 1940).

2. Michael P. Delmo, Shinpei Yamamoto, Shinya Kasai1, Teruo Ono and Kensuke Kobayashi. Nature 457, 1112-U65 (2009).

3. M. P. Delmo, S. Kasai, K. Kobayashi, and T. Ono. Appl. Phys. Lett. 95, 132106-132108 (2009).

4. M. P. Delmo, S. Kasai, K. Kobayashi, and T. Ono. J. Phys.: Conf. Ser. 193, 012001-012004 (2009).

5. J. J. H. M. Schoonus, F. L. Bloom, W. Wagemans, H. J. M. Swagten, and B. Koopmans. Phys. Rev. L. 100, 127202-127205 (2008).

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