A Large Magnetoresistance Effect in p-n Junction Devices by the Space-Charge Effect-Reference-Cited by-同舟云学术

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A Large Magnetoresistance Effect in p-n Junction Devices by the Space-Charge Effect

Published:2013-02-06 Issue:23 Volume:23 Page:2918-2923
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Yang Dezheng,Wang Fangcong,Ren Yang,Zuo Yalu,Peng Yong,Zhou Shiming,Xue Desheng

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Current Jets, Disorder, and Linear Magnetoresistance in the Silver Chalcogenides

2. Large magnetoresistance in non-magnetic silver chalcogenides

3. Large Magnetoresistance of Electrodeposited Single-Crystal Bismuth Thin Films

4. Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors

5. Magnetic-field-controllable avalanche breakdown and giant magnetoresistive effects in Gold∕semi-insulating-GaAs Schottky diode

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