Effect of a magnetic field on thermally activated tunneling ionization of impurity centers in semiconductors-Reference-Cited by-同舟云学术

Effect of a magnetic field on thermally activated tunneling ionization of impurity centers in semiconductors

Published:1998-11 Issue:10 Volume:68 Page:804-809
ISSN:0021-3640
Container-title:Journal of Experimental and Theoretical Physics Letters
language:en
Short-container-title:Jetp Lett.

Author:

Perel’ V. I.,Yassievich I. N.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.567949.pdf

Reference6 articles.

1. V. Karpus and V. I. Perel’, JETP Lett. 42, 497 (1985).

2. S. D. Ganichev, E. Ziemann, Th. Gleim et al., Phys. Rev. Lett. 80, 2409 (1998).

3. V. N. Abakumov, V. I. Perel’, and I. N. Yassievich, in Nonradiative Recombination in Semiconductors, Vol. 33 of Modern Problems in Condensed Matter Sciences, edited by V. M. Agranovich and A. A. Maradudin, Amsterdam, North-Holland, 1991.

4. S. D. Ganichev, I. N. Yassievich, and W. Prettl, Fiz. Tverd. Tela (Leningrad) 39, 1905 (1997) [Sov. Phys. Solid State 39, 1703 (1997)].

5. L. P. Kotova, A. M. Perelomov, and V. S. Popov, Zh. Éksp. Teor. Fiz. 54, 1151 (1968) [Sov. Phys. JETP 27, 616 (1968)].

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