Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3531753
Reference13 articles.
1. Origin of efficiency droop in GaN-based light-emitting diodes
2. Temperature-Dependent Electroluminescence Efficiency in Blue InGaN–GaN Light-Emitting Diodes With Different Well Widths
3. Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
4. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes
5. Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer
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