Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes-Reference-Cited by-同舟云学术

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Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

Published:2009-06-08 Issue:23 Volume:94 Page:231123
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Han Sang-Heon,Lee Dong-Yul,Lee Sang-Jun,Cho Chu-Young,Kwon Min-Ki,Lee S. P.,Noh D. Y.,Kim Dong-Joon,Kim Yong Chun,Park Seong-Ju

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3153508

Reference13 articles.

1. Solid-State Light Sources Getting Smart

2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

3. Auger recombination in InGaN measured by photoluminescence

4. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

5. Origin of efficiency droop in GaN-based light-emitting diodes

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